THIN-FILM TRANSISTOR COMPRISING GATE ELECTRODE OF MoW ALLOY

摘要

When a gate metallic film of a polycrystalline silicon thin-film transistor is made of an MoW alloy, the MoW film may be transformed because of the residual water in SiO>2< of an underlying gate insulating film and an interlayer insulating film and the reliability may be deteriorated because of variation in the negative direction during the B-T test. According to the invention, a mixture gas containing Ar or Kr and several percent of N>2< is used to form the MoW film by sputtering so as to add Ar or N to the film, the degree of orientation of the MoW film is controlled, and the composition ratio of Mo to W on the gate insulating film side is different from that on the opposite side.