METHOD FOR FABRICATING SOI(SILICON ON INSULATOR) MOS TRANSISTOR

摘要

PURPOSE: A method for fabricating a SOI(Silicon On Insulator) MOS transistor is provided to suppress a channel effect by reducing the thickness of a body area with a simple process. CONSTITUTION: A SOI(Silicon On Insulator) film(120) is formed which is separated from a semiconductor substrate(100) by a buried oxide(110). And the SOI film is separated by forming an oxide pattern(130) in the SOI film. And an amorphous silicon layer is formed on the separated SOI film and the oxide pattern. A crystallized silicon film(140) is formed by performing an annealing process to crystallize the amorphous silicon layer. And a gate insulation film(150) is formed on the crystallized silicon film, and a gate conductive film(160) is formed on the gate insulation film. And a source/drain region(180) is formed in the crystallized silicon film and the SOI film. The annealing process is performed by a laser annealing, RTA(Rapid Thermal Annealing) or SPE(Solid Phase Epitaxy) method.