| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to simplify process and simultaneously improve a barrier characteristic. CONSTITUTION: The method includes four steps. The first step is to form a metal film(23) having a high melting point on a semiconductor substrate(21). The second step is to form a barrier metal film(24) on the metal film having the high melting point by differing nitrogen ratio with an in-situ process of two steps. The third step is to form a silicide film(26) having a high melting point on the boundary surface of the semiconductor substrate and the metal film having the high melting point by thermal processing of the semiconductor substrate. The fourth step is to form a bit line(27) on the barrier metal film.
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