A PROCESS FOR FORMING A SEMICONDUCTOR STRUCTURE

摘要

High quality epitaxial layers of compound semiconductor materials can be gro wn overlying large silicon wafers by first growing an accommodating buffer laye r (24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer is preferably formed by oxygen diffusion through the oxide buffer and permits t he growth of a high quality monocrystalline oxide accommodating buffer layer. T he process further may comprise formation of template layers (28, 30) and a semiconducteur buffer layer (32). It's especially suited for cointegration o f compound semiconducteur and Si SMOS devices.