Method of manufacturing a semiconductor device involving forming a resin on one face and thinning the opposite face

摘要

A method of manufacturing a semiconductor device comprises forming a resin layer (3) on the front face of semiconductor wafer (1) having electrodes (2) , and then thinning the back face of the wafer (1). A conductive section may be formed on the electrodes (2) by plating (13, Fig. 4b), wire bonding or by connecting metallic balls (15, Fig. 4b). The thinning process may involve mechanical grinding, chemical etching or plasma etching, resulting in a wafer of thickness less than 300 žm. The method may also involve cutting the wafer to separate the different semiconductor elements mounted on the wafer (1). The resin layer may include silica, alumina, zirconia, quartz fibre, glass fibre or resin fibre, or inorganic particles capable of absorbing ionic impurities. A semiconductor device is also claimed with a resin layer (3), and a wafer (1) of thickness below 300 žm.