| 摘要 |
A method of manufacturing borderless contact can compensate for misalignment that occurs during formation of the contacts. First, a substrate with a gate structure on it is provided. The substrate also has source/drain regions. Spacers are formed on the sidewalls of the gate structure. Thereafter, an insulating layer conformal to the substrate profile is formed over the substrate. Then, a portion of the insulating layer is removed so that the remaining isolating layer at least covers the gate structure and the source/drain regions. Next, a dielectric layer having openings is formed over the insulating layer, and then a portion of the insulating layer at the bottom of the openings is removed to expose the source/drain region, thereby forming contact openings. Finally, conductive material is deposited into the contact openings to form contacts that couple electrically with the respective source/drain regions.
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