| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase growth method capable of growing a thin membrane having a uniform composition even on treating many base substrates having a large area simultaneously, and a vapor phase growth device. SOLUTION: This vapor phase growth method installing a base substrate S on a base substrate-holding stage 4 installed in a reacting oven 1 and forming a thin film on the surface of the base substrate by supplying a raw material gas G from a prescribed direction, is provided by installing the above base substrate-holding stage as closely making contact with an inner wall 3 in an upper or a lower direction in the reacting oven and controlling the temperature at the inner wall 3 opposing to the above base substrate-holding stage and making contact with the above raw material gas, as becoming at or lower than the decomposition temperature of the above raw material gas and also the temperature of at least a part of the zone of the base substrate-holding stage in the position corresponding to the upstream side of the raw material gas flow as becoming the same as or higher than the decomposition temperature of the above raw material gas.
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