METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of a capacitor is provided to increase a reliability and to improve an electrical characteristic by forming an edgeless node electrode due to a polysilicon. CONSTITUTION: An insulation layer(11) and a silicon nitride layer(12) are sequentially deposited on a substrate. After forming a contact hole, a first polysilicon and a first insulation layer are sequentially deposited on the entire surface of the resultant structure and an insulation pillar is formed by etching the resultant structure using a photoresist. A second polysilicon layer for storage node electrode is deposited and a second oxide is formed on the resultant structure. A node electrode pattern(17) is formed by etching the second oxide and the second polysilicon layer using the silicon nitride layer(12) as an etching stopper. A dielectric(18) is formed and a plate electrode(19) made of a polysilicon is then formed on the resultant structure. At this time, an edgeless node electrode is completed.