发明名称 |
Edge structure and drift region for a semiconductor component and production method |
摘要 |
The invention relates to an edge structure and a drift region for a semiconductor component. A semiconductor body of the one conductivity type has an edge area with a plurality of regions of the other conductivity type embedded in at least two mutually different planes. Underneath an active zone of the semiconductor component the regions are connected over different planes via connection zone, but the regions are otherwise floating.
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申请公布号 |
US6274904(B1) |
申请公布日期 |
2001.08.14 |
申请号 |
US19990387388 |
申请日期 |
1999.09.02 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
TIHANYI JENOE |
分类号 |
H01L29/06;H01L29/08;H01L29/24;H01L29/40;H01L29/739;H01L29/78;H01L29/808;H01L29/861;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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