| 摘要 |
PROBLEM TO BE SOLVED: To provide a raw material of GaAs crystal capable of carrying As without requiring ampoule, etc., and without oxidizing As. SOLUTION: This raw material 1 is used for production of GaAs crystal by utilizing coagulation of a melt and houses As 12 in the interior of Ga 10 and 11. Since As 12 is covered by Ga 10 and 11, As 12 can be carried without oxidizing As 12. The raw material 1 for production is directly heat-melted and crystal is grown according to Czochralski method, etc., to enable production of GaAs crystal. |
