Method of pocket implant modeling for a CMOS process

摘要

The invention comprises a method of determining the thermal straggle of microelectronic devices having a pocket dopant implant that is formed under substantially the same doping conditions. The method comprises measuring the operating characteristics of each device (32) and obtaining a one-dimensional doping profile of dopant ions in the devices (30). A total lateral straggle of the dopant ions in the devices is determined in response to the operating characteristics and the one-dimensional doping profile of the dopant ions (34). An as-implanted straggle of the dopant ions in the devices is determined in response to the doping conditions (36). A thermal straggle of the dopant ions is calculated utilizing the as-implanted straggle and the total lateral straggle (38).