摘要 |
An improved method of forming a via on a semiconductor substrate forms a conductive line thereon and then forms an inter-metal dielectric layer over the conductive line. A patterned photoresist layer is formed on the inter-metal dielectric layer. A portion of the inter-metal dielectric layer is removed to expose the conductive line using the photoresist layer as a mask to form a via hole, wherein the via hole is subsequently used to form a via. A high density plasma process is performed to remove the photoresist layer. The photoresist layer remaining on the substrate is removed with a solvent.
|