发明名称 Circuit for applying power to static random access memory cell
摘要 A power supply circuit for a static random access memory cell or the like is provided that reliably supplies a voltage different from an external power supply voltage. The power supply circuit can include a first transistor with a first electrode coupled to an external power source, and a second electrode coupled to a first node that supplies the voltage different from the external power supply voltage. First and second resistors are coupled in series between the first node and a ground voltage. A third resistor is coupled in series to the external power supply. A second transistor has a first electrode coupled to the third resistor at a second node, a second electrode coupled to the ground voltage, and a control electrode coupled to a third node, which is between the first and second resistors. A third transistor having a first electrode coupled to the external power supply source, a second electrode coupled to the gate of the first transistor at a fourth node, and a control electrode coupled to the second node; and a fourth resistor coupled in series between the fourth node and the ground voltage. The power supply circuit can further include a frequency compensation circuit coupled between the second and fourth nodes.
申请公布号 US6275438(B1) 申请公布日期 2001.08.14
申请号 US20000525908 申请日期 2000.03.15
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 JEONG SEONG-IK
分类号 G11C5/14;G11C11/417;(IPC1-7):G11C7/00 主分类号 G11C5/14
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