| 发明名称 |
Semiconductor piezoresistor |
| 摘要 |
A piezoresistor having a base substrate with a quantum well structure formed on the base substrate. The quantum well structure includes at least one quantum well layer bounded by barrier layers. The barrier layers are formed from a material having a larger bandgap than the at least one quantum well layer.
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| 申请公布号 |
US6275137(B1) |
申请公布日期 |
2001.08.14 |
| 申请号 |
US20000500408 |
申请日期 |
2000.02.08 |
| 申请人 |
BOSTON MICROSYSTEMS, INC. |
发明人 |
DOPPALAPUDI DHARANIPAL;MOUSTAKAS THEODORE D.;MLCAK RICHARD;TULLER HARRY L. |
| 分类号 |
G01L1/22;H01L29/15;(IPC1-7):E10L1/22 |
主分类号 |
G01L1/22 |
| 代理机构 |
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