| 摘要 |
PURPOSE: A semiconductor power device is provided to dispose every electrode on a chip by coupling a double diffusion metal oxide semiconductor(DMOS) to a bipolar transistor so that the electrode coexists with a CMOS circuit on the same chip. CONSTITUTION: The second conductive buried layer(2) is formed on the first conductive substrate(1). The second conductive epi layer(3) is formed on the second conductive buried layer and the substrate. The second conductive deep collector(4) is connected to the second conductive buried layer. The first and second isolating oxide layers(5a,5b) are formed in the epi layer outside the second conductive deep collector. The third and fourth isolating oxide layers(5c,5d) isolate the second conductive deep collector from the epi layer. The first conductive diffusion layer(6) is formed in the epi layer inside the second conductive deep collector. The first and second field oxide layers are formed on the third and fourth isolating oxide layers and the epi layer. A gate insulation layer and a gate are formed on the epi layer. The first diffusion region(10a) of the second conductivity type is formed on the center of the first conductive diffusion region. The second and third diffusion regions(10b,10c) of the second conductivity type are separated from each other. The fourth and fifth diffusion regions(10d,10e) of the second conductivity type are formed on the deep collector. The first and second diffusion regions(11a,11b) of the first conductivity type are separated from the first diffusion region of the second conductivity type, contacting the second and third diffusion regions.
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