SINGLE CRYSTAL SiC AND METHOD FOR GROWING THE SAME

摘要

PROBLEM TO BE SOLVED: To obtain high-grade single crystal SiC in which strain and micropipe defect do not appear by growing the single crystal so that influence of micropipe which a single crystal substrate has is not taken over. SOLUTION: A cut face 1a of an α-SiC single crystal substrate 1 cut into a plate-like state along the face of Miller index (11-20) ±10 deg. is superposed to Miller index (220) face 2a of a β-SiC polycrystal plate 2 and these α-single crystal substrate and β-SiC polycrystal plate 2 are heat-treated to integrally grow a single crystal part 4 having crystal orientation of cut face 1a direction on the β-SiC polycrystal plate 2 on the pattern of the α-SiC single crystal substrate 1.