发明名称 |
Method for single chamber processing of PECVD-Ti and CVD-TiN films for integrated contact/barrier applications in IC manufacturing |
摘要 |
A single chamber method for depositing a stack including titanium and titanium nitride on a wafer surface. Titanium is deposited by plasma enhanced chemical vapor deposition and then plasma nitrided. Titanium nitride is subsequently deposited by a thermal chemical vapor deposition process. Advantageously, the temperatures of the substrate and showerhead as well as the internal chamber pressure are maintained at substantially constant values throughout deposition of the stack.
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申请公布号 |
US6274496(B1) |
申请公布日期 |
2001.08.14 |
申请号 |
US20000553833 |
申请日期 |
2000.04.21 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
LEUSINK GERRIT J.;WARD MICHAEL G.;AMEEN MICHAEL S.;HILLMAN JOSEPH T. |
分类号 |
C23C16/30;C23C16/02;C23C16/14;C23C16/34;C23C16/56;H01L21/28;H01L21/285;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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