PLASMA TREATING SYSTEM FOR APPLICATION TO SPUTTER FILM DEPOSITION

摘要

PROBLEM TO BE SOLVED: To provide a plasma treating system generating plasma of a large area and high density uniform over the surface of a substrate and moreover capable of preventing the resticking of a film onto a target plate. SOLUTION: A plasma treating system for application to sputtering treatment is composed of two parallel capacity coupling type electrodes 11 and 14 called as upper and lower electrodes and a reaction vessel 10 provided with a multipolar electrode array over the outside region of the upper electrode. The magnet 21 rotates on the upper electrode and is therefore assembled to the surface of a metallic ring. A target plate 18 is fixed to the upper electrode applied with only a high frequency rf electric current or with a high frequency rf electric current and DC voltage. The lower electrode arranged with a substrate 19 is applied with an rf electric current such as MF, HF or VHF so that negative self-bias voltage is generated on the lower electrode for taking out ionized sputter atoms filling a contact hole on the surface of the substrate.