发明名称 |
Thermoelectric semiconductor material, manufacture process therefor, and method of hot forging thermoelectric module using the same |
摘要 |
A thermoelectric semiconductor material having sufficient strength and performance and high production yield. The thermoelectric semiconductor material is characterized in that a sintered powder material of a thermoelectric semiconductor having a rhombohedral structure (or hexagonal structure) is hot-forged and plastically deformed to direct either the crystals of the sintered powder structure or the subcrystals constructing the crystals in a crystal orientation having an excellent figure of merit.
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申请公布号 |
US6274802(B1) |
申请公布日期 |
2001.08.14 |
申请号 |
US19990254657 |
申请日期 |
1999.03.15 |
申请人 |
KOMATSU LTD. |
发明人 |
FUKUDA KATSUSHI;SATO YASUNORI;KAJIHARA TAKESHI |
分类号 |
H01L35/16;H01L35/34;(IPC1-7):H01L35/34 |
主分类号 |
H01L35/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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