发明名称 Thermoelectric semiconductor material, manufacture process therefor, and method of hot forging thermoelectric module using the same
摘要 A thermoelectric semiconductor material having sufficient strength and performance and high production yield. The thermoelectric semiconductor material is characterized in that a sintered powder material of a thermoelectric semiconductor having a rhombohedral structure (or hexagonal structure) is hot-forged and plastically deformed to direct either the crystals of the sintered powder structure or the subcrystals constructing the crystals in a crystal orientation having an excellent figure of merit.
申请公布号 US6274802(B1) 申请公布日期 2001.08.14
申请号 US19990254657 申请日期 1999.03.15
申请人 KOMATSU LTD. 发明人 FUKUDA KATSUSHI;SATO YASUNORI;KAJIHARA TAKESHI
分类号 H01L35/16;H01L35/34;(IPC1-7):H01L35/34 主分类号 H01L35/16
代理机构 代理人
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