发明名称 |
Semiconductor device and manufacturing method therefor |
摘要 |
An active layer of an NTFT includes a channel forming region, at least a first impurity region, at least a second impurity region and at least a third impurity region therein. Concentrations of an impurity in each of the first, second and third impurity regions increase as distances from the channel forming region become longer. The first impurity region is formed to be overlapped with a side wall. A gate overlapping structure can be realized with the side wall functioning as an electrode.
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申请公布号 |
US6274887(B1) |
申请公布日期 |
2001.08.14 |
申请号 |
US19990431131 |
申请日期 |
1999.11.01 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;OHTANI HISASHI;HAMATANI TOSHIJI |
分类号 |
G02F1/1362;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/04;H01L29/786;H01L51/52;(IPC1-7):H01L29/04 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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