发明名称 |
Semiconductor structure having interconnects on a projecting region and substrate |
摘要 |
A region is formed in a semiconductor substrate and extends beyond the substrate surface. First and second interconnects each having a predetermined thickness and a surface approximately parallel to the substrate surface are formed on the region. The first and second interconnects define a trench therebetween. A third interconnect is formed on the substrate. The thicknesses of the first and second interconnects are reduced a first amount to improve the aspect ratio of the trench, to improve the cross-sectional profile of the trench, or both. The thickness of the third strip is reduced a second amount. The second amount may be smaller than the first amount.
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申请公布号 |
US6274897(B1) |
申请公布日期 |
2001.08.14 |
申请号 |
US19990339716 |
申请日期 |
1999.06.24 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BLALOCK GUY;MEIKLE SCOTT;KIM SUNG;PRALL KIRK |
分类号 |
H01L21/768;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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