| 发明名称 |
Process sequence to improve DRAM data retention |
| 摘要 |
The sidewall nitride etch is modified to leave a thin layer of nitride covering the silicon in a DRAM array. The nitride layer prevents damage to the silicon and improves the integrity and refresh time of the array.
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| 申请公布号 |
US6274481(B1) |
申请公布日期 |
2001.08.14 |
| 申请号 |
US19980196911 |
申请日期 |
1998.11.20 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
YANG MING;HUANG JIM |
| 分类号 |
H01L21/768;H01L21/8242;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
| 代理机构 |
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| 地址 |
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