| 摘要 |
The invention concerns a method for producing epitaxial layers of Silicon (Si) and Germanium (Ge) compounds, which consists in: introducing, in an epitaxial chamber (6), a carrier gas, a Silicon compound gas and a Germanium compound gas, the moisture content in the mixture of said gases being less than 2 ppm; producing the epitaxial growth at a temperature less than 750 DEG C. The invention is also useful for producing epitaxial layers of Silicon (Si), Germanium (Ge) and Carbon compounds. |
