| 摘要 |
PURPOSE: A reactor with remote plasma system is provided to be capable of being applied to a new device by accelerating its growth process and lowering its treating temperature and to supply a reaction gas so as to maintain the stability of a formed film. CONSTITUTION: The reactor(10) includes a heater assembly(20), which delivers heat to the substrate, an emissivity measurement assembly(22) which permits continuous emissivity measurement of the average surface area of the device side of the substrate during processing, and a housing(24) which forms processing chamber(18). Substrate(12) is supported in processing chamber(18) on a platform(26) which is made from a suitable material, such as silicon carbide coated graphite, and is oriented with a device side(12a) directed toward an upper wall or cover(28) of housing(24).
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