METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to solve the problem of a step generated in process of manufacturing the semiconductor device. CONSTITUTION: The method forms a pattern throughout three or more plural layers and includes six steps. The first step is to decide the position of a function pattern of the first layer of continuing three layers. The second step is to decide the position of a function pattern of the second layer. The third step is to expect part for badness to be generated by the step of the upper surface of the first interlayer dielectric film(11) when the function pattern of the second layer is formed. The fourth step is to decide the part as the position of a dummy pattern of the first layer and form a pattern(13) of the first layer which includes the dummy pattern of the first layer and the function pattern of the first layer. The fifth step is to form the function pattern(17) of the second layer. The sixth step is to form a pattern(21) of the third layer.