HALF TONE PHASE SHIFT MASK AND METHOD FOR MANUFACTURING THE MASK

摘要

PURPOSE: A half tone phase shift mask and method for manufacturing the mask is provided to increase an optical dose margin in order to prevent a photosensitive pattern from being degenerated due to a sidelobe effect. CONSTITUTION: The half tone phase shift mask includes a transparent substrate, a photosensitive pattern, and a light block pattern(34). The photosensitive pattern is defined by an aperture. The photosensitive pattern is formed on a semiconductor substrate which is included by a phase shifter pattern by exposing the upper portion of the transparent substrate with a predetermined width. The light block pattern is included on the surface of the phase shifter pattern. A plate which is parallel with the bottom surface of the aperture is included around the aperture, and the light which passes the bottom of the aperture and the light passes the plate have a phase difference of 180 degree. The light passing the bottom of the aperture and the light passing the upper portion of the phase shifter pattern are designed to have a phase-difference greater than 180 degree.