| 摘要 |
PURPOSE: A method for forming a capacitor is provided to prevent barrier material from oxidizing ferroelectric film during deposition or a rear thermal processing step. CONSTITUTION: The method includes the first through seventh steps. The first step is to form an insulation film(32) having a conductive plug on a semiconductor substrate(31) at a constant interval. The second step is to sequentially form a nitride film pattern and an oxide film pattern to expose the surface of the conductive plug and an insulation film adjacent to the conductive plug. The third step is to form a barrier material film(36) all over the semiconductor substrate including the nitride film and oxide film. The fourth step is to coat photoresist on the barrier material film and then perform etch-back on the photoresist so that the photoresist between the nitride film and the oxide film remains. The fifth step is to selectively remove an exposed barrier material film by using the residual photoresist as a mask. The sixth step is to form a lower electrode(38,39) wrapping the barrier material film by removing the residual photoresist and the oxide film pattern. The seventh step is to sequentially form a ferroelectric film(40) and an upper electrode(41) on the lower electrode.
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