| 摘要 |
PURPOSE: To provide a semiconductor element with a III-V family nitride semiconductor layer of superb crystallizability while preventing warp of a substrate. CONSTITUTION: A III-V family nitride semiconductor layer 20 as thick as 8μm or less is provided on a substrate 11 made of sapphire, thus reducing the warp of the substrate 11 due to the difference in the thermal coefficient of expansion and the lattice constant between the substrate 11 and the III-V family nitride semiconductor layer 20. An n-side contact layer 23 composing the III-V family nitride semiconductor layer 20 partially has a lateral growth region that is grown in a lateral direction from a crystal 22A of a seed crystal layer 22. The lateral growth region has low dislocation density and hence crystallizability at a part corresponding to the lateral growth region of each layer being formed on the n-side contact layer 23 is high. |
