发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER |
摘要 |
PURPOSE: A method of manufacturing a semiconductor wafer is provided to etch the semiconductor wafer and evade an elevation called an edge gutter. CONSTITUTION: In a semiconductor wafer manufacturing method, an etching medium is made to flow in a laminar in a flow direction toward the edge of a semiconductor wafer at etching, and a protective shield is disposed in front of the edge of the semiconductor wafer, by which the etching medium flows toward the protective shield. Therefore. it is restrained from flowing toward the edge of the semiconductor wafer.
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申请公布号 |
KR20010076388(A) |
申请公布日期 |
2001.08.11 |
申请号 |
KR20010003168 |
申请日期 |
2001.01.19 |
申请人 |
WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG |
发明人 |
FRANKE HELMUT;SCHOEFBERGER MANFRED;SCHWAB GUENTER |
分类号 |
H01L21/02;H01L21/00;H01L21/304;H01L21/306;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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