发明名称 PLASMA PROCESS SYSTEM
摘要 PURPOSE: To provide a plasma process system advantageous in terms of cost, and capable of attaining a uniform plasma process even in the case that the load impedance of plasma produced in a reaction chamber varies. CONSTITUTION: A plurality of microwave introducing windows 2a, 2b are disposed in the upper wall 1a of a reaction chamber 1. Microwaves of identical electric power are applied to the microwave introducing windows 2a, e.g. two in number, located in equivalent positions in the positional relationship with a side wall 1b of the reaction chamber 1 and microwaves of dissimilar electric power are applied to the microwave introducing windows 2a, 2b, e.g. two in number, in the nonequivalent positional relationship.
申请公布号 KR20010076262(A) 申请公布日期 2001.08.11
申请号 KR20010001865 申请日期 2001.01.12
申请人 OHMI TADAHIRO;SHARP CORPORATION 发明人 HIRAYAMA MASAKI;OKAMOTO MASAYA;OMI TADAHIRO;YAMAMOTO TATSUSHI
分类号 H01L21/302;C23C16/511;H01J37/32;H01L21/205;H01L21/3065;H05H1/46;(IPC1-7):H01L21/205 主分类号 H01L21/302
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