| 摘要 |
PURPOSE: To realize a MOSFET, which can increase its on-current and can reduce its off-current, by a method, where the threshold voltage of the ends of a channel region is made low in comparison with the threshold voltage of the center of the channel region. CONSTITUTION: In a MOSFET 201, the value of a unit capacitor, which is formed by a gate electrode 13 and the surface of a semiconductor substrate 1 via a second gate insulating film 10, can be made higher than that value of a unit capacitor, which is formed by the gate electrode 13 and the surface of the substrate 1 via first gate insulating films 7. As the dielectric contact of a silicon nitride film, which is used for films 7, is higher than the dielectric constant of a silicon oxide film, which is used for the film 10, it is easy to obtain this relation between the sized of the above two-unit capacitors.
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