METHOD FOR FORMING METAL WIRE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal wire of a semiconductor device is provided to prevent damage of an aluminium layer used as a metal wire by forming a fine oxide layer on the aluminium layer. CONSTITUTION: A silicon substrate is loaded on a chamber for sputtering Ti. A degassing process is performed to remove a gas from the chamber. A Ti layer with a thickness of 5000 to 8000 angstrom is deposited on the silicon substrate(S11). An aluminium layer as a metal wire is deposited on the Ti layer.(S12). A thermal process for the aluminium layer is performed under a temperature of 530 to 550 degrees centigrade in order to flow the aluminium layer(S13). An oxide layer is formed on the aluminium layer by performing a thermal process for the aluminium layer under a temperature of 450 or more degrees centigrade(S14). A cooling process for the aluminium layer is performed under a temperature of 18 degrees centigrade in a cooling chamber(S15).