| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for treating the surface of a sample with which the surface is irradiated with UV rays for the purpose of performing a dimension-working process efficiently when a process such as etching is performed for an organic lowpermittivity material, to meet a demand for speedup of a semiconductor element. SOLUTION: The device for treating a surface of a sample, with which working for a fine pattern by plasma etching is performed, is provided with a sample pedestal provided in a vacuum vessel on which the sample to be surface-treated is mounted, a treatment gas supply means that supplies a treatment gas for producing plasma continuously into the vacuum vessel, a plasma-producing means that produces plasma in the vacuum vessel, a bias supply that applies bias voltage to the sample pedestal separately from plasma production, and a plasma or UV ray generation device that irradiates the sample with UV rays. The process such as etching is performed efficiently for the sample mounted on the sample pedestal.
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