| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor memory with a double preventing film for preventing hydrogen diffusion in an oxide film and a Ti film, capable of effectively preventing diffusion of hydrogen generated in a passivation process. SOLUTION: The semiconductor comprises an active matrix formed of a transistor and a first insulating film around the transistor, a lower electrode, a capacitor thin film on the lower electrode, and an upper electrode on the capacitor thin film. Therefore, the semiconductor includes the capacitor on the first insulating film, a hydrogen diffusion preventing film on the capacitor, a second insulating film on the transistor and the capacitor, and a metal wiring electrically connecting the transistor and the capacitor formed on the second insulating film.
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