| 摘要 |
PURPOSE: To provide a semiconductor storage unit having quick access speed. CONSTITUTION: In a DRAM 1, a selector 34 selects data of one bit out of data of four bits read out from a memory section 33, and the data DO is given to a data output buffer 41. The data output buffer 41 is controlled by an output permission signal ZOE' generated from a discrimination signal JDO and the like, when the data of four bits are coincident mutually, the data DO from the selector 34 is given to a data input/output terminal T0, when they are not coincident, the data input/output terminal TO is made to be a high impedance state. As a selector 40 selecting either of the read-out data DO and the discrimination signal JDO is not required, delay of the read-out data DO caused by the selector 40 can be prevented.
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