METHOD FOR REMOVING SCRATCH AND METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE USING THE METHOD

摘要

PURPOSE: A method for removing a scratch is provided to easily remove a scratch generated when a film to be polished is polished and a method for forming a pattern is provided to minimize badness by the scratch. CONSTITUTION: The method for removing the scratch includes two steps. The first step is to flatly form the surface of a film(22) to be processed by polishing the film formed on a semiconductor substrate(20) with a polishing pad. The second step is to remove a scratch generated on the surface of the film to be processed when the film is polished by etching back the surface of the film. The method for forming a pattern of the semiconductor device includes fourth steps. The first step is to form an insulating film a semiconductor substrate on which a lower structure is formed. The second step is to polish the insulating film with a polishing pad to flatly form the surface of the insulating film. The third step is to remove a scratch generated on the surface of a film to be polished when the insulating film is polished by etching back the surface of the insulating film. The fourth step is to form an insulating film having an opened portion by etching a predetermined part of the insulating film.