MANUFACTURING METHOD OF SEMICONDUCTOR, MANUFACTURING METHOD OF FLASH MEMORY, MANUFACTURING METHOD OF STATIC RANDOM ACCESS MEMORY, AND FLASH MEMORY

摘要

PURPOSE: To provide a method for manufacturing a semiconductor device that has been improved to prevent a modified resist surface layer from being released when continuously performing dry etching and wet etching by the same resist pattern. CONSTITUTION: An insulation film 2 and a conductive layer 3 are successively formed on a semiconductor substrate 1. A resist pattern 4 is formed on the conductive layer 3. By using the resist pattern 4 as a mask, the conductive layer 3 is subjected to dry etching. The surface-layer part of the resist pattern 4 is partially scraped. By using the resist pattern 4 as a mask, the insulation film 2 is subjected to wet etching.