发明名称 POSITIVE PHOTORESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a positive photoresist composition having satisfactory sensitively and resolving power in the formation of a contact hole pattern in the production of a semiconductor device and generating few particles in a resist solution. SOLUTION: The positive photoresist composition contains (A) an acid generating sulfonium salt compound represented by a specified structure and (B) an acid decomposable siloxane having repeating units of a specified structure.
申请公布号 JP2001215705(A) 申请公布日期 2001.08.10
申请号 JP20000028103 申请日期 2000.02.04
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO;MIZUTANI KAZUYOSHI
分类号 H01L21/027;C08L83/04;G03F7/004;G03F7/039;G03F7/075 主分类号 H01L21/027
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