| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory which can operate a current mirror type sense amplifier circuit at high speed and in which low power consumption can be realized. SOLUTION: This device has a first switch mechanism 9 controlling whether a through current is made to flow in current mirror type sense amplifier circuits 1-4 or not, second switch mechanisms 5-8 turning on/off these sense amplifier circuits 1-4, and these sense amplifier circuits 1-4, the first switch mechanism 9 is connected to a reference side (side 1) current path of this sense amplifier circuits 1-4, the second switch mechanisms 5-8 are connected to a third switch mechanism 3 connected to memory cells of this sense amplifier circuits 1-4, and a time interval from the time when the second switch mechanisms 5-8 is varied from OFF to ON until the first switch mechanism 9 is varied from ON to OFF is set as the prescribed time.</p> |
