| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for forming a bonding pad in multilayer structure with a simple method without increasing the number of processes in the manufacturing method of a semiconductor device where a wiring layer is formed by the damascene method, and the semiconductor device. SOLUTION: In the manufacturing method of a semiconductor device, at least a layer including a bonding pad 80 is formed by the damascene method while following processes (a)-(c) are included. In the process (a) an opening region 80a for the bonding pad part is formed on an insulation layer 30 at the uppermost layer while the opening region is further divided by an insulation layer 22a with a specific pattern and has a plurality of partial opening parts 81, in the process (b) a plurality of conductive layers 820 and 840 that are made of a different quality of material are successively formed on the insulation layer, and in the process (c) the bonding pad 80 in that a plurality of conductive layers 82 and 74 made of a different quality of material are exposed is formed in each partial opening part 81 of the opening region 80a, by eliminating the unneeded portion of the plurality of conductive layer 820 and 840 and the insulation layer 30 and flattening the plurality of conductive layers and insulation layer. |
