| 摘要 |
<p>PROBLEM TO BE SOLVED: To make uniform and optimal the recrystallizing process by laser- annealing of a semiconductor thin film to be an active layer of a bottom gate type thin film transistor. SOLUTION: The thin film semiconductor device is composed of bottom-gate- structured thin film transistors integrated on an insulation substrate 1, each transistor consisting of a gate electrode 5, a gate insulation film 4 and a semiconductor thin film 2 laminated in this order. The gate electrode 4 is made of a metal material and its thickness Tm is less than 100 nm, the gate insulation film 4 has a thickness Ti over the gate electrode 5 thickness Tm, and the semiconductor thin film 2 is of a polycrystalline silicon crystallized by laser beam irradiation. Thinning the gate electrode thickness reduces its heat capacity and the thermal condition difference between on the metal-made gate electrode and on the insulation substrate made of glass, etc.</p> |
