| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a prove which can measure the circuit even on a large diameter wafer. SOLUTION: A sample 2, e.g. a wafer, is scanned by means of a focused ion beam 16 from a charged particle beam irradiation optical system 3, secondary electrons emitted from the surface of the sample 2 are detected by means of a detector 4 and the obtained image of secondary electrons is observed in order to detect a failure part (e.g. disconnection) of an integrated circuit formed on the sample 2. Detection of the failure part is facilitated by applying a potential to an arbitrary part on the surface of the sample 2 using a probe 6 movable in three axial directions thereby enhancing the potential contrast of the image of secondary electrons. When a failure pat is detected, a sample region including the failure part is picked up by microsampling method and a sample piece thus picked up is sliced to obtain a sample for TEM observation.</p> |
