| 摘要 |
PROBLEM TO BE SOLVED: To prevent electrical characteristic deterioration of a semiconductor device and the occurrence of defects, such as interlayer peeling, crackings in the layers, in the device, and to obtain a polycrystalline layer having a desired thickness and small particle diameter by lamination of the polycrystalline material layers. SOLUTION: At the time of forming, for example, a gate electrode 2 on a semiconductor substrate 4 through a silicon oxide film 5, the electrode 2 is constituted of a laminated body of polycrystalline silicon layers 6. The electrode 2 is formed by a thin film manufacturing method having a step of causing amorphous layers to be deposited and a step of crystallizing (recrystallizing) the amorphous material of the amorphous layers. The laminated structure of the polycrystalline layers 6 having necessary thicknesses is formed by dividing the step of causing the amorphous layers to be deposited into a plurality of times, so that the thickness of the amorphous layer formed once may become the thickness prescribed by the critical stress value decided in accordance with a condemned event, and successively performing the step of crystallizing the amorphous material, and then, repeating both steps. |
