发明名称 SUBSTRATE AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To relieve stress in a connection part which is caused by thermal expansion coefficient difference between a semiconductor ship and a mounting substrate. SOLUTION: In this substrate formed by this manufacturing method, the semiconductor chip is mounted on a mounting substrate via posts having cores which are composed of flexible resin and protruded from the substrate. As a result, the stress caused by the thermal expansion coefficient difference between the semiconductor chip and the mounting substrate is relieved.
申请公布号 JP2001217336(A) 申请公布日期 2001.08.10
申请号 JP20000055881 申请日期 2000.03.01
申请人 MITSUI HIGH TEC INC 发明人 NAKAJIMA TAKASHI
分类号 H01L23/12;(IPC1-7):H01L23/12 主分类号 H01L23/12
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