SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To reduce irregularity of threshold voltage of a micronized MISFET. SOLUTION: A gate electrode 9a of the MISFET (Q1)is formed on a substrate 1 of an active region L whose periphery is regulated by an element isolating trench 2 and stretches from one end to the other end of the active region L intersecting it. The gate electrode 9a whose gate length in a boundary region between the active region L and element isolating trench 2 is greater than that in the central part of the active region L is constituted of an H-shaped plane pattern as a whole. The gate electrode 9a covers the whole of one edge along the gate lengthwise direction of the boundary region between the active region L and element isolating trench 2 and covers a part of two edges along the gate width direction.