| 摘要 |
PROBLEM TO BE SOLVED: To improve mechanical strength of a lower electrode when precious metal materials such as ruthenium and the like are used for the lower electrode, and to overcome problem on oxidation resistance and sputtering resistivity required for barrier film. SOLUTION: After a barrier film 40 is formed on a plug 39, a silicon nitride film 41 and a silicon oxide film 42 are formed in order in an silicon oxide film 34, and a hole 43 is formed by etching the silicon oxide film 42 and the silicon nitride film 41. A ruthenium film is deposited to embed the hole 43, and the ruthenium on the silicon oxide film 42 except the hole 43 is remove to form the lower electrode 45 comprising the ruthenium in the hole 43. The silicon oxide film 43 is removed, and BST film of a capacitor insulating film is deposited and heat treated in the oxidized atmosphere. |
