INNER PROTECTIVE CIRCUIT FOR ON-CHIP PROGRAMMABLE POLYSILICON FUSE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an integrated circuit provided with a programmable fuse which includes an ESD circuit for preventing the damage of an on-die fuse but still is operable in an on-die programming mode and can prevent the damage of the on-die fuse such as a polysilicon fuse and also provide a method of manufacturing the same. SOLUTION: An integrated circuit (10) includes at least one programmable fuse (F1) and an ESD circuit (MN3, MN1) to prevent the opening of the fuse (F1) without being noticed when a voltage transition occurs in the main voltage potential Vmain. In is preferred that the ESD circuit is provided with a MOSFET switch so connected as to be turned on more quickly then a main fuse programmable switch MNmain3. Such a MOSFET switch prevents the opening of the fuse (F1) without being noticed and guarantees that the main switch is kept in an off state during the voltage transition. This circuit is suitable for a programmable logic device (PLD), making the read-out of voltage as low as 6 volts and programmable voltage as high as 40 volts possible.