METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and this semiconductor device which reveals good characteristics on a substrate inferior in heat resistance. SOLUTION: The semiconductor device is manufactured by forming a silicon film on a first insulation film formed on a substrate, heating the silicon film to form a crystalline silicon film, selectively etching the crystalline silicon film to form an island-like crystalline silicon film, oxidating at least the upside and the side face of the island-like crystalline silicon film to form a silicon oxide film, forming a second insulation film by the CVD method with covering at least this silicon oxide film, and forming a gate electrode on the second insulation film.