| 摘要 |
PROBLEM TO BE SOLVED: To highly integrate a storage device (magnetic memory device) which uses a ferromagnetic tunnel junction element and realize the storage of multi- valued information using such a storage device, SOLUTION: Memory elements ME11, ME21, each provided with a ferromagnetic tunnel junction element, are laminated on a semiconductor substrate 1 with a bit line BL1 put between. The memory element ME11 can write information by being applied with a magnetic field caused by currents in a control line CL1 and the bit line BL1. The memory element ME21 can write information by being applied with a magnetic field caused by currents in the bit line BL1 and a control line CL2. By connecting the memory elements ME11, ME21 to transistors Tr11, Tr21 respectively, two cells can be disposed in an area for one memory cell. By connecting the memory elements ME11, ME21 to a common transistor, multi-valued information can be stored.
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