发明名称 MAGNETIC RESISTANCE ELEMENT
摘要 PROBLEM TO BE SOLVED: To precisely detect the direction of an outer magnetic field through the use of magnetic tunnel effect. SOLUTION: Lower electrodes 11 are installed on a substrate 10, and magnetic tunnel junction structure constituted of ferromagnetic films 12 and 13, insulating layers 14, ferromagnetic films 15 and dummy films 16 are formed on the lower electrodes 11. A fixed magnetization layer where the direction of magnetization is fixed is formed by the ferromagnetic films 12 and 13. A free magnetization layer changing the direction of magnetization by the ferromagnetic films 15 is constituted. The ferromagnetic films 15 are formed on rectangles and the direction of fixed magnetization by the ferromagnetic films 12 and 13 is set to be the short side direction of the ferromagnetic film 15.
申请公布号 JP2001217478(A) 申请公布日期 2001.08.10
申请号 JP20000024474 申请日期 2000.02.01
申请人 YAMAHA CORP 发明人 SUZUKI TOSHINAO;SATO HIDEKI;YAMASHITA MASAYOSHI;KANEKO AKIRA
分类号 H01L43/08;G01R33/09;(IPC1-7):H01L43/08 主分类号 H01L43/08
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